Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films
10.1063/1.3197144
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2014
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sg-nus-scholar.10635-822122023-10-30T23:01:53Z Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films Lim, P.S.Y. Lee, R.T.P. Sinha, M. Chi, D.Z. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.3197144 Journal of Applied Physics 106 4 - JAPIA 2014-10-07T04:26:42Z 2014-10-07T04:26:42Z 2009 Article Lim, P.S.Y., Lee, R.T.P., Sinha, M., Chi, D.Z., Yeo, Y.-C. (2009). Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films. Journal of Applied Physics 106 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3197144 00218979 http://scholarbank.nus.edu.sg/handle/10635/82212 000270083800044 Scopus |
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Singapore Singapore |
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10.1063/1.3197144 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Lim, P.S.Y. Lee, R.T.P. Sinha, M. Chi, D.Z. Yeo, Y.-C. |
| format |
Article |
| author |
Lim, P.S.Y. Lee, R.T.P. Sinha, M. Chi, D.Z. Yeo, Y.-C. |
| spellingShingle |
Lim, P.S.Y. Lee, R.T.P. Sinha, M. Chi, D.Z. Yeo, Y.-C. Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films |
| author_sort |
Lim, P.S.Y. |
| title |
Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films |
| title_short |
Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films |
| title_full |
Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films |
| title_fullStr |
Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films |
| title_full_unstemmed |
Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films |
| title_sort |
effect of substitutional carbon concentration on schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/82212 |
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1781784082186764288 |