Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor

• Main Authors: Wang, L., Han, G., Su, S., Zhou, Q., Yang, Y., Guo, P., Wang, W., Tong, Y., Lim, P.S.Y., Xue, C., Wang, Q., Cheng, B., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83944
• Institution: National University of Singapore

10.1109/VLSI-TSA.2012.6210151