Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study

Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study

10.1063/1.4805051

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Bibliographic Details
Main Authors: Yang, Y., Lu Low, K., Wang, W., Guo, P., Wang, L., Han, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82417
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82417

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