Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)

• Main Authors: Yang, Y., Su, S., Guo, P., Wang, W., Gong, X., Wang, L., Low, K.L., Zhang, G., Xue, C., Cheng, B., Han, G., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84314
• Institution: National University of Singapore

10.1109/IEDM.2012.6479053