Tunneling field-effect transistor (TFET) with novel Ge/In 0.53Ga0.47As tunneling junction

Tunneling field-effect transistor (TFET) with novel Ge/In 0.53Ga0.47As tunneling junction

10.1149/05009.0971ecst

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Bibliographic Details
Main Authors: Guo, P., Yang, Y., Cheng, Y., Han, G., Chia, C.K., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84329
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/84329

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