Silane and ammonia surface passivation technology for high-mobility In 0.53Ga0.47As MOSFETs

Silane and ammonia surface passivation technology for high-mobility In 0.53Ga0.47As MOSFETs

10.1109/TED.2010.2044285

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Bibliographic Details
Main Authors: Chin, H.-C., Liu, X., Gong, X., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
High mobility
High-κ
InGaAs
Metal-oxide- semiconductor field-effect transistor (MOSFET)
Surface passivation
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83018
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83018

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