Silane and ammonia surface passivation technology for high-mobility In 0.53Ga0.47As MOSFETs

Silane and ammonia surface passivation technology for high-mobility In 0.53Ga0.47As MOSFETs

10.1109/TED.2010.2044285

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Bibliographic Details
Main Authors:	Chin, H.-C., Liu, X., Gong, X., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	High mobility High-κ InGaAs Metal-oxide- semiconductor field-effect transistor (MOSFET) Surface passivation
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83018
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Institution:	National University of Singapore

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