Tunneling field-effect transistor with Ge/In0.53Ga 0.47As heterostructure as tunneling junction

Tunneling field-effect transistor with Ge/In0.53Ga 0.47As heterostructure as tunneling junction

10.1063/1.4794010

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Bibliographic Details
Main Authors: Guo, P., Yang, Y., Cheng, Y., Han, G., Pan, J., Ivana, Zhang, Z., Hu, H., Shen, Z.X., Chia, C.K., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83230
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83230

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