Tunneling field-effect transistor with Ge/In0.53Ga 0.47As heterostructure as tunneling junction

• Main Authors: Guo, P., Yang, Y., Cheng, Y., Han, G., Pan, J., Ivana, Zhang, Z., Hu, H., Shen, Z.X., Chia, C.K., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83230
• Institution: National University of Singapore

10.1063/1.4794010