Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering

Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering

Digest of Technical Papers - Symposium on VLSI Technology

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Bibliographic Details
Main Authors: Chin, H.-C., Xiao, G., Xinke, L., Zhe, L., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84232
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/84232

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