A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts

10.1109/ESSDERC.2012.6343362

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Bibliographic Details
Main Authors: Zhang, X., Guo, H.X., Gong, X., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83348
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Institution: National University of Singapore