A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts

10.1109/ESSDERC.2012.6343362

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Bibliographic Details
Main Authors:	Zhang, X., Guo, H.X., Gong, X., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83348
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83348
record_format	dspace
spelling	sg-nus-scholar.10635-833482024-11-08T16:45:29Z A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts Zhang, X. Guo, H.X. Gong, X. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/ESSDERC.2012.6343362 European Solid-State Device Research Conference 177-180 2014-10-07T04:40:14Z 2014-10-07T04:40:14Z 2012 Conference Paper Zhang, X.,Guo, H.X.,Gong, X.,Yeo, Y.-C. (2012). A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts. European Solid-State Device Research Conference : 177-180. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ESSDERC.2012.6343362" target="_blank">https://doi.org/10.1109/ESSDERC.2012.6343362</a> 9781467317078 19308876 http://scholarbank.nus.edu.sg/handle/10635/83348 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/ESSDERC.2012.6343362
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Zhang, X. Guo, H.X. Gong, X. Yeo, Y.-C.
format	Conference or Workshop Item
author	Zhang, X. Guo, H.X. Gong, X. Yeo, Y.-C.
spellingShingle	Zhang, X. Guo, H.X. Gong, X. Yeo, Y.-C. A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts
author_sort	Zhang, X.
title	A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts
title_short	A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts
title_full	A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts
title_fullStr	A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts
title_full_unstemmed	A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts
title_sort	gate-last in0.53ga0.47as channel finfet with molybdenum source/drain contacts
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83348
_version_	1821200983081877504

A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts

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