Multiple-gate In0.53Ga0.47As channel n-MOSFETs with self-aligned Ni-InGaAs contacts

by Zhang, X., Guo, H.X., Gong, X., Yeo, Y.-C.
Published 2014

A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts

by Zhang, X., Guo, H.X., Gong, X., Yeo, Y.-C.
Published 2014

Multiple-gate In 0.53Ga 0.47As Channel n-MOSFETs with self-aligned Ni-InGaAs contacts

by Zhang, X., Guo, H.X., Gong, X., Guo, C., Yeo, Y.-C.
Published 2014

Ge/Ni-InGaAs solid-state reaction for contact resistance reduction on n + In 0.53Ga 0.47As

by Guo, H.X., Kong, E.Y.J., Zhang, X., Yeo, Y.-C.
Published 2014

In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric

by Zhang, X., Guo, H.X., Zhu, Z., Gong, X., Yeo, Y.-C.
Published 2014

A self-aligned Ni-InGaAs contact technology for InGaAs channel n-MOSFETs

by Zhang, X., Ivana, Guo, H.X., Gong, X., Zhou, Q., Yeo, Y.-C.
Published 2014

Junctionless II-gate transistor with indium gallium arsenide channel

by Guo, H.X., Zhang, X., Zhu, Z., Kong, E.Y.J., Yeo, Y.-C.
Published 2014