Co-InGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs

by Ivana, Subramanian, S., Kong, E.Y.-J., Zhou, Q., Yeo, Y.-C.
Published 2014

Pd-InGaAs as a new self-aligned contact material on InGaAs

by Kong, E.Y.-J., Zhang, X., Ivana, Zhou, Q., Yeo, Y.-C.
Published 2014

Ge/Ni-InGaAs solid-state reaction for contact resistance reduction on n + In 0.53Ga 0.47As

by Guo, H.X., Kong, E.Y.J., Zhang, X., Yeo, Y.-C.
Published 2014

CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs

by Ivana, Kong, E.Y.-J., Subramanian, S., Zhou, Q., Pan, J., Yeo, Y.-C.
Published 2014

Junctionless II-gate transistor with indium gallium arsenide channel

by Guo, H.X., Zhang, X., Zhu, Z., Kong, E.Y.J., Yeo, Y.-C.
Published 2014

Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation

by Koh, S.-M., Kong, E.Y.-J., Liu, B., Ng, C.-M., Samudra, G.S., Yeo, Y.-C.
Published 2014

Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistors

by Kong, E.Y.-J., Ivana, Zhang, X., Zhou, Q., Pan, J., Zhang, Z., Yeo, Y.-C.
Published 2014

A novel floating body cell memory with a laterally engineered bandgap using a Si-Si:C heterostructure

by Choi, S.-J., Moon, D.-I., Ding, Y., Kong, E.Y.J., Yeo, Y.-C., Choi, Y.-K.
Published 2014

New Tellurium implant and segregation for contact resistance reduction and single metallic silicide technology for independent contact resistance optimization in n- and p-FinFETs

by Koh, S.-M., Kong, E.Y.J., Liu, B., Ng, C.-M., Liu, P., Mo, Z.-Q., Leong, K.-C., Samudra, G.S., Yeo, Y.-C.
Published 2014

Sub-400 °C Si2H6 passivation, HfO2 gate dielectric, and single TaN metal gate: A common gate stack technology for In0.7Ga0.3As and Ge1-xSnx CMOS

by Gong, X., Han, G., Liu, B., Wang, L., Wang, W., Yang, Y., Kong, E.Y.-J., Su, S., Xue, C., Cheng, B., Yeo, Y.-C.
Published 2014

Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drain

by Liu, B., Zhan, C., Yang, Y., Cheng, R., Guo, P., Zhou, Q., Kong, E.Y.-J., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C.
Published 2014

Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs

by Wang, L., Han, G., Su, S., Zhou, Q., Yang, Y., Guo, P., Wang, W., Tong, Y., Lim, P.S.Y., Liu, B., Kong, E.Y.-J., Xue, C., Wang, Q., Cheng, B., Yeo, Y.-C.
Published 2014