Supervisory control of dynamic voltage restorers

by Ramachandaramurthy V.K., Arulampalam A., Fitzer C., Zhan C., Barnes M., Jenkins N.
Published 2023

Direct binding of triglyceride to fat storage-inducing transmembrane proteins 1 and 2 is important for lipid droplet formation

by Gross, D.A., Zhan, C., Silver, D.L.
Published 2016

Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors

by Liu, B., Yang, M., Zhan, C., Yang, Y., Yeo, Y.-C.
Published 2014

Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate

by Han, G., Guo, P., Yang, Y., Zhan, C., Zhou, Q., Yeo, Y.-C.
Published 2014

Simulation of tunneling field-effect transistors with extended source structures

by Yang, Y., Guo, P., Han, G., Lu Low, K., Zhan, C., Yeo, Y.-C.
Published 2014

Enhancement of TFET performance using Dopant Profile-Steepening Implant and source dopant concentration engineering at tunneling junction

by Han, G., Yee, Y.S., Guo, P., Yang, Y., Fan, L., Zhan, C., Yeo, Y.-C.
Published 2014

Source engineering for tunnel field-effect transistor: Elevated source with vertical silicon-germanium/germanium heterostructure

by Han, G., Guo, P., Yang, Y., Fan, L., Yee, Y.S., Zhan, C., Yeo, Y.-C.
Published 2014

(110)-oriented germanium-tin (Ge0.97Sn0.03) P-channel MOSFETs

by Zhan, C., Wang, W., Gong, X., Guo, P., Liu, B., Yang, Y., Han, G., Yeo, Y.-C.
Published 2014

AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxid...

by Liu, X., Zhan, C., Chan, K.W., Liu, W., Tan, L.S., Chen, K.J., Yeo, Y.-C.
Published 2014

AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process

by Liu, X., Zhan, C., Chan, K.W., Liu, W., Tan, L.S., Teo, K.L., Chen, K.J., Yeo, Y.-C.
Published 2014

Device physics and design of a L-shaped germanium source tunneling transistor

by Low, K.L., Zhan, C., Han, G., Yang, Y., Goh, K.-H., Guo, P., Toh, E.-H., Yeo, Y.-C.
Published 2014

Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistor

by Liu, B., Gong, X., Zhan, C., Han, G., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C.
Published 2014

PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model

by Han, G., Yang, Y., Guo, P., Zhan, C., Low, K.L., Goh, K.H., Liu, B., Toh, E.-H., Yeo, Y.-C.
Published 2014

Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drain

by Han, G., Su, S., Zhou, Q., Guo, P., Yang, Y., Zhan, C., Wang, L., Wang, W., Wang, Q., Xue, C., Cheng, B., Yeo, Y.-C.
Published 2014

AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free p...

by Liu, X., Zhan, C., Wai Chan, K., Samuel Owen, M.H., Liu, W., Chi, D.Z., Tan, L.S., Chen, K.J., Yeo, Y.-C.
Published 2014

Germanium-Tin (GeSn) N-channel MOSFETs with low temperature silicon surface passivation

by Guo, P., Zhan, C., Yang, Y., Gong, X., Liu, B., Cheng, R., Wang, W., Pan, J., Zhang, Z., Tok, E.S., Han, G., Yeo, Y.-C.
Published 2014

High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modules

by Han, G., Su, S., Zhan, C., Zhou, Q., Yang, Y., Wang, L., Guo, P., Wei, W., Wong, C.P., Shen, Z.X., Cheng, B., Yeo, Y.-C.
Published 2014

Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drain

by Liu, B., Zhan, C., Yang, Y., Cheng, R., Guo, P., Zhou, Q., Kong, E.Y.-J., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C.
Published 2014

Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrate

by Liu, B., Gong, X., Zhan, C., Han, G., Chin, H.-C., Ling, M.-L., Li, J., Liu, Y., Hu, J., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C.
Published 2014

A new self-aligned contact technology for III-V MOSFETs

by Guo, H., Zhang, X., Chin, H.-C., Gong, X., Koh, S.-M., Zhan, C., Luo, G.-L., Chang, C.-Y., Lin, H.-Y., Chien, C.-H., Han, Z.-Y., Huang, S.-C., Cheng, C.-C., Ko, C.-H., Wann, C.H., Yeo, Y.-C.
Published 2014