Source engineering for tunnel field-effect transistor: Elevated source with vertical silicon-germanium/germanium heterostructure

Source engineering for tunnel field-effect transistor: Elevated source with vertical silicon-germanium/germanium heterostructure

10.1143/JJAP.50.04DJ07

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Bibliographic Details
Main Authors: Han, G., Guo, P., Yang, Y., Fan, L., Yee, Y.S., Zhan, C., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83038
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83038

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