Source engineering for tunnel field-effect transistor: Elevated source with vertical silicon-germanium/germanium heterostructure

10.1143/JJAP.50.04DJ07

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書目詳細資料
Main Authors: Han, G., Guo, P., Yang, Y., Fan, L., Yee, Y.S., Zhan, C., Yeo, Y.-C.
其他作者: ELECTRICAL & COMPUTER ENGINEERING
格式: Article
出版: 2014
在線閱讀:http://scholarbank.nus.edu.sg/handle/10635/83038
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