Source engineering for tunnel field-effect transistor: Elevated source with vertical silicon-germanium/germanium heterostructure

Source engineering for tunnel field-effect transistor: Elevated source with vertical silicon-germanium/germanium heterostructure

10.1143/JJAP.50.04DJ07

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Bibliographic Details
Main Authors:	Han, G., Guo, P., Yang, Y., Fan, L., Yee, Y.S., Zhan, C., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83038
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

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