Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors

• Main Authors: Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Tan, B.L.-H., Balasubramanian, N., Yeo, Y.-C.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: Compliance; FinFET; Germanium; Multiple-gate transistor (MuGFET); Strain; Stress
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/82414
• 機構: National University of Singapore

10.1109/LED.2008.2000669