Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors

Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors

10.1109/LED.2008.2000669

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Bibliographic Details
Main Authors: Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Tan, B.L.-H., Balasubramanian, N., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Compliance
FinFET
Germanium
Multiple-gate transistor (MuGFET)
Strain
Stress
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82414
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Institution: National University of Singapore

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