Ultra high-stress liner comprising diamond-like carbon for performance enhancement of p-channel multiple-gate transistors

Ultra high-stress liner comprising diamond-like carbon for performance enhancement of p-channel multiple-gate transistors

10.1109/TED.2009.2019388

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Bibliographic Details
Main Authors: Tan, K.-M., Yang, M., Liow, T.-Y., Lee, R.T.P., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Contact etch stop layer (CESL)
Diamond-like carbon (DLC)
FinFET
Multiple-gate
Strain
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83239
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83239

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