NBTI reliability of P-channel transistors with diamond-like carbon liner having ultrahigh compressive stress

NBTI reliability of P-channel transistors with diamond-like carbon liner having ultrahigh compressive stress

10.1109/LED.2009.2024332

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Bibliographic Details
Main Authors: Liu, B., Tan, K.-M., Yang, M., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Diamond-like carbon (DLC)
Reliability
Strain
Transistor
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82745
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82745

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