NBTI reliability of P-channel transistors with diamond-like carbon liner having ultrahigh compressive stress

NBTI reliability of P-channel transistors with diamond-like carbon liner having ultrahigh compressive stress

10.1109/LED.2009.2024332

Saved in:
Bibliographic Details
Main Authors: Liu, B., Tan, K.-M., Yang, M., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Diamond-like carbon (DLC)
Reliability
Strain
Transistor
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82745
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Description
Summary:10.1109/LED.2009.2024332

Similar Items