Ultra high-stress liner comprising diamond-like carbon for performance enhancement of p-channel multiple-gate transistors
10.1109/TED.2009.2019388
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sg-nus-scholar.10635-832392023-10-30T07:12:21Z Ultra high-stress liner comprising diamond-like carbon for performance enhancement of p-channel multiple-gate transistors Tan, K.-M. Yang, M. Liow, T.-Y. Lee, R.T.P. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Contact etch stop layer (CESL) Diamond-like carbon (DLC) FinFET Multiple-gate Strain 10.1109/TED.2009.2019388 IEEE Transactions on Electron Devices 56 6 1277-1283 IETDA 2014-10-07T04:38:56Z 2014-10-07T04:38:56Z 2009 Article Tan, K.-M., Yang, M., Liow, T.-Y., Lee, R.T.P., Yeo, Y.-C. (2009). Ultra high-stress liner comprising diamond-like carbon for performance enhancement of p-channel multiple-gate transistors. IEEE Transactions on Electron Devices 56 (6) : 1277-1283. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2019388 00189383 http://scholarbank.nus.edu.sg/handle/10635/83239 000266330200015 Scopus |
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Contact etch stop layer (CESL) Diamond-like carbon (DLC) FinFET Multiple-gate Strain |
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Contact etch stop layer (CESL) Diamond-like carbon (DLC) FinFET Multiple-gate Strain Tan, K.-M. Yang, M. Liow, T.-Y. Lee, R.T.P. Yeo, Y.-C. Ultra high-stress liner comprising diamond-like carbon for performance enhancement of p-channel multiple-gate transistors |
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10.1109/TED.2009.2019388 |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Tan, K.-M. Yang, M. Liow, T.-Y. Lee, R.T.P. Yeo, Y.-C. |
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Article |
author |
Tan, K.-M. Yang, M. Liow, T.-Y. Lee, R.T.P. Yeo, Y.-C. |
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Tan, K.-M. |
title |
Ultra high-stress liner comprising diamond-like carbon for performance enhancement of p-channel multiple-gate transistors |
title_short |
Ultra high-stress liner comprising diamond-like carbon for performance enhancement of p-channel multiple-gate transistors |
title_full |
Ultra high-stress liner comprising diamond-like carbon for performance enhancement of p-channel multiple-gate transistors |
title_fullStr |
Ultra high-stress liner comprising diamond-like carbon for performance enhancement of p-channel multiple-gate transistors |
title_full_unstemmed |
Ultra high-stress liner comprising diamond-like carbon for performance enhancement of p-channel multiple-gate transistors |
title_sort |
ultra high-stress liner comprising diamond-like carbon for performance enhancement of p-channel multiple-gate transistors |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/83239 |
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1781784339744292864 |