Ultra high-stress liner comprising diamond-like carbon for performance enhancement of p-channel multiple-gate transistors

10.1109/TED.2009.2019388

Saved in:
Bibliographic Details
Main Authors: Tan, K.-M., Yang, M., Liow, T.-Y., Lee, R.T.P., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83239
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Similar Items