Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)

Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)

10.1109/TED.2009.2021351

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Bibliographic Details
Main Authors: Lee, R.T.P., Chi, D.Z., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
External resistance
FinFET
Platinum germanosilicide
Schottky barrier
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82918
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82918

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