Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)

10.1109/TED.2009.2021351

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Main Authors: Lee, R.T.P., Chi, D.Z., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
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Online Access:http://scholarbank.nus.edu.sg/handle/10635/82918
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spelling sg-nus-scholar.10635-829182023-10-27T08:58:14Z Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs) Lee, R.T.P. Chi, D.Z. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING External resistance FinFET Platinum germanosilicide Schottky barrier 10.1109/TED.2009.2021351 IEEE Transactions on Electron Devices 56 7 1458-1465 IETDA 2014-10-07T04:35:03Z 2014-10-07T04:35:03Z 2009 Article Lee, R.T.P., Chi, D.Z., Yeo, Y.-C. (2009). Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs). IEEE Transactions on Electron Devices 56 (7) : 1458-1465. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2021351 00189383 http://scholarbank.nus.edu.sg/handle/10635/82918 000267433800013 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic External resistance
FinFET
Platinum germanosilicide
Schottky barrier
spellingShingle External resistance
FinFET
Platinum germanosilicide
Schottky barrier
Lee, R.T.P.
Chi, D.Z.
Yeo, Y.-C.
Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)
description 10.1109/TED.2009.2021351
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Lee, R.T.P.
Chi, D.Z.
Yeo, Y.-C.
format Article
author Lee, R.T.P.
Chi, D.Z.
Yeo, Y.-C.
author_sort Lee, R.T.P.
title Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)
title_short Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)
title_full Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)
title_fullStr Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)
title_full_unstemmed Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)
title_sort platinum germanosilicide as source/drain contacts in p-channel fin field-effect transistors (finfets)
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/82918
_version_ 1781784252342337536