Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistor

Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistor

10.1143/JJAP.47.2589

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Bibliographic Details
Main Authors: Tan, K.-M., Liow, T.-Y., Lee, R.T.P., Zhu, M., Hoe, K.-M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Extended-Pi
FinFET
SiGe
Source/drain
Strained
Tri-gate
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56837
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/56837

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