Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistor
10.1143/JJAP.47.2589
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sg-nus-scholar.10635-568372023-10-26T07:29:35Z Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistor Tan, K.-M. Liow, T.-Y. Lee, R.T.P. Zhu, M. Hoe, K.-M. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Extended-Pi FinFET SiGe Source/drain Strained Tri-gate 10.1143/JJAP.47.2589 Japanese Journal of Applied Physics 47 4 PART 2 2589-2592 JAPND 2014-06-17T02:59:13Z 2014-06-17T02:59:13Z 2008-04-25 Article Tan, K.-M., Liow, T.-Y., Lee, R.T.P., Zhu, M., Hoe, K.-M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C. (2008-04-25). Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistor. Japanese Journal of Applied Physics 47 (4 PART 2) : 2589-2592. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.47.2589 00214922 http://scholarbank.nus.edu.sg/handle/10635/56837 000255449100054 Scopus |
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Extended-Pi FinFET SiGe Source/drain Strained Tri-gate |
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Extended-Pi FinFET SiGe Source/drain Strained Tri-gate Tan, K.-M. Liow, T.-Y. Lee, R.T.P. Zhu, M. Hoe, K.-M. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistor |
| description |
10.1143/JJAP.47.2589 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Tan, K.-M. Liow, T.-Y. Lee, R.T.P. Zhu, M. Hoe, K.-M. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. |
| format |
Article |
| author |
Tan, K.-M. Liow, T.-Y. Lee, R.T.P. Zhu, M. Hoe, K.-M. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. |
| author_sort |
Tan, K.-M. |
| title |
Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistor |
| title_short |
Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistor |
| title_full |
Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistor |
| title_fullStr |
Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistor |
| title_full_unstemmed |
Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistor |
| title_sort |
novel extended-pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistor |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/56837 |
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1781781289268936704 |