Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistor

• Main Authors: Tan, K.-M., Liow, T.-Y., Lee, R.T.P., Zhu, M., Hoe, K.-M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Extended-Pi; FinFET; SiGe; Source/drain; Strained; Tri-gate
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/56837
• Institution: National University of Singapore

10.1143/JJAP.47.2589