Analysis of the effects of fringing electric field on finFET device performance and structural optimization using 3-D simulation

Analysis of the effects of fringing electric field on finFET device performance and structural optimization using 3-D simulation

10.1109/TED.2008.919308

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Bibliographic Details
Main Authors: Zhao, H., Yeo, Y.-C., Rustagi, S.C., Samudra, G.S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Capacitance
FinFET
Fringing electric field
Simulation
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55096
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/55096

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