Analysis of the effects of fringing electric field on finFET device performance and structural optimization using 3-D simulation

10.1109/TED.2008.919308

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Main Authors: Zhao, H., Yeo, Y.-C., Rustagi, S.C., Samudra, G.S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
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Online Access:http://scholarbank.nus.edu.sg/handle/10635/55096
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spelling sg-nus-scholar.10635-550962024-11-08T16:46:06Z Analysis of the effects of fringing electric field on finFET device performance and structural optimization using 3-D simulation Zhao, H. Yeo, Y.-C. Rustagi, S.C. Samudra, G.S. ELECTRICAL & COMPUTER ENGINEERING Capacitance FinFET Fringing electric field Simulation 10.1109/TED.2008.919308 IEEE Transactions on Electron Devices 55 5 1177-1184 IETDA 2014-06-17T02:39:07Z 2014-06-17T02:39:07Z 2008-05 Article Zhao, H., Yeo, Y.-C., Rustagi, S.C., Samudra, G.S. (2008-05). Analysis of the effects of fringing electric field on finFET device performance and structural optimization using 3-D simulation. IEEE Transactions on Electron Devices 55 (5) : 1177-1184. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.919308 00189383 http://scholarbank.nus.edu.sg/handle/10635/55096 000255317900011 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Capacitance
FinFET
Fringing electric field
Simulation
spellingShingle Capacitance
FinFET
Fringing electric field
Simulation
Zhao, H.
Yeo, Y.-C.
Rustagi, S.C.
Samudra, G.S.
Analysis of the effects of fringing electric field on finFET device performance and structural optimization using 3-D simulation
description 10.1109/TED.2008.919308
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Zhao, H.
Yeo, Y.-C.
Rustagi, S.C.
Samudra, G.S.
format Article
author Zhao, H.
Yeo, Y.-C.
Rustagi, S.C.
Samudra, G.S.
author_sort Zhao, H.
title Analysis of the effects of fringing electric field on finFET device performance and structural optimization using 3-D simulation
title_short Analysis of the effects of fringing electric field on finFET device performance and structural optimization using 3-D simulation
title_full Analysis of the effects of fringing electric field on finFET device performance and structural optimization using 3-D simulation
title_fullStr Analysis of the effects of fringing electric field on finFET device performance and structural optimization using 3-D simulation
title_full_unstemmed Analysis of the effects of fringing electric field on finFET device performance and structural optimization using 3-D simulation
title_sort analysis of the effects of fringing electric field on finfet device performance and structural optimization using 3-d simulation
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/55096
_version_ 1821208315380629504