Analysis of the effects of fringing electric field on finFET device performance and structural optimization using 3-D simulation
10.1109/TED.2008.919308
Saved in:
Main Authors: | Zhao, H., Yeo, Y.-C., Rustagi, S.C., Samudra, G.S. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/55096 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Simulation of multiple gate FinFET device gate capacitance and performance with gate length and pitch scaling
by: Zhao, H., et al.
Published: (2014) -
Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)
by: Lee, R.T.P., et al.
Published: (2014) -
Drive-current enhancement in FinFETs using gate-induced stress
by: Tan, K.-M., et al.
Published: (2014) -
A FinFET and Tri-gate MOSFET's channel structure patterning and its influence on the device performance
by: Jagar, S., et al.
Published: (2014) -
Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths
by: Lee, R.T.-P., et al.
Published: (2014)