Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content

Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content

10.1109/TED.2008.928025

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Bibliographic Details
Main Authors: Liow, T.-Y., Tan, K.-M., Weeks, D., Lee, R.T.P., Zhu, M., Hoe, K.-M., Tung, C.-H., Bauer, M., Spear, J., Thomas, S.G., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
FinFET
In situ doped
Multiple-gate field-effect transistor (MuGFET)
Silicon-carbon
Strain
Stress
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83079
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83079

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