Liow, T., Tan, K., Weeks, D., Lee, R., Zhu, M., Hoe, K., . . . ENGINEERING, E. &. C. (2014). Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content.
استشهاد بنمط شيكاغوLiow, T.-Y., et al. Strained N-channel FinFETs Featuring in Situ Doped Silicon-carbon (Si1-yCy) Source and Drain Stressors With High Carbon Content. 2014.
MLA استشهادLiow, T.-Y., et al. Strained N-channel FinFETs Featuring in Situ Doped Silicon-carbon (Si1-yCy) Source and Drain Stressors With High Carbon Content. 2014.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.