Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content
10.1109/TED.2008.928025
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sg-nus-scholar.10635-830792023-10-29T20:57:53Z Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content Liow, T.-Y. Tan, K.-M. Weeks, D. Lee, R.T.P. Zhu, M. Hoe, K.-M. Tung, C.-H. Bauer, M. Spear, J. Thomas, S.G. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING FinFET In situ doped Multiple-gate field-effect transistor (MuGFET) Silicon-carbon Strain Stress 10.1109/TED.2008.928025 IEEE Transactions on Electron Devices 55 9 2475-2483 IETDA 2014-10-07T04:37:00Z 2014-10-07T04:37:00Z 2008 Article Liow, T.-Y., Tan, K.-M., Weeks, D., Lee, R.T.P., Zhu, M., Hoe, K.-M., Tung, C.-H., Bauer, M., Spear, J., Thomas, S.G., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C. (2008). Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content. IEEE Transactions on Electron Devices 55 (9) : 2475-2483. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.928025 00189383 http://scholarbank.nus.edu.sg/handle/10635/83079 000258914000025 Scopus |
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FinFET In situ doped Multiple-gate field-effect transistor (MuGFET) Silicon-carbon Strain Stress |
| spellingShingle |
FinFET In situ doped Multiple-gate field-effect transistor (MuGFET) Silicon-carbon Strain Stress Liow, T.-Y. Tan, K.-M. Weeks, D. Lee, R.T.P. Zhu, M. Hoe, K.-M. Tung, C.-H. Bauer, M. Spear, J. Thomas, S.G. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C. Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content |
| description |
10.1109/TED.2008.928025 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Liow, T.-Y. Tan, K.-M. Weeks, D. Lee, R.T.P. Zhu, M. Hoe, K.-M. Tung, C.-H. Bauer, M. Spear, J. Thomas, S.G. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C. |
| format |
Article |
| author |
Liow, T.-Y. Tan, K.-M. Weeks, D. Lee, R.T.P. Zhu, M. Hoe, K.-M. Tung, C.-H. Bauer, M. Spear, J. Thomas, S.G. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C. |
| author_sort |
Liow, T.-Y. |
| title |
Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content |
| title_short |
Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content |
| title_full |
Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content |
| title_fullStr |
Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content |
| title_full_unstemmed |
Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content |
| title_sort |
strained n-channel finfets featuring in situ doped silicon-carbon (si1-ycy) source and drain stressors with high carbon content |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/83079 |
| _version_ |
1781784294877822976 |