Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors

Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors

10.1109/LED.2008.2000669

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Bibliographic Details
Main Authors: Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Tan, B.L.-H., Balasubramanian, N., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Compliance
FinFET
Germanium
Multiple-gate transistor (MuGFET)
Strain
Stress
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82414
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-824142024-11-11T18:20:08Z Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Zhu, M. Tan, B.L.-H. Balasubramanian, N. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Compliance FinFET Germanium Multiple-gate transistor (MuGFET) Strain Stress 10.1109/LED.2008.2000669 IEEE Electron Device Letters 29 7 808-810 EDLED 2014-10-07T04:29:07Z 2014-10-07T04:29:07Z 2008-07 Article Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Tan, B.L.-H., Balasubramanian, N., Yeo, Y.-C. (2008-07). Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors. IEEE Electron Device Letters 29 (7) : 808-810. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2000669 07413106 http://scholarbank.nus.edu.sg/handle/10635/82414 000257626000048 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Compliance
FinFET
Germanium
Multiple-gate transistor (MuGFET)
Strain
Stress
spellingShingle Compliance
FinFET
Germanium
Multiple-gate transistor (MuGFET)
Strain
Stress
Liow, T.-Y.
Tan, K.-M.
Lee, R.T.P.
Zhu, M.
Tan, B.L.-H.
Balasubramanian, N.
Yeo, Y.-C.
Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors
description 10.1109/LED.2008.2000669
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Liow, T.-Y.
Tan, K.-M.
Lee, R.T.P.
Zhu, M.
Tan, B.L.-H.
Balasubramanian, N.
Yeo, Y.-C.
format Article
author Liow, T.-Y.
Tan, K.-M.
Lee, R.T.P.
Zhu, M.
Tan, B.L.-H.
Balasubramanian, N.
Yeo, Y.-C.
author_sort Liow, T.-Y.
title Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors
title_short Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors
title_full Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors
title_fullStr Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors
title_full_unstemmed Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors
title_sort germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/82414
_version_ 1821212505894027264

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