Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications

10.1063/1.2924413

Saved in:
Bibliographic Details
Main Authors: Toh, E.-H., Wang, G.H., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55626
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore