Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications

Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications

10.1063/1.2924413

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Bibliographic Details
Main Authors:	Toh, E.-H., Wang, G.H., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/55626
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Institution:	National University of Singapore

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