Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications

Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications

10.1063/1.2924413

محفوظ في:

التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Toh, E.-H., Wang, G.H., Samudra, G., Yeo, Y.-C.
مؤلفون آخرون:	ELECTRICAL & COMPUTER ENGINEERING
التنسيق:	مقال
منشور في:	2014
الوصول للمادة أونلاين:	http://scholarbank.nus.edu.sg/handle/10635/55626
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
المؤسسة:	National University of Singapore

مواد مشابهة

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