Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications

10.1063/1.2924413

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Main Authors: Toh, E.-H., Wang, G.H., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55626
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-556262023-10-29T22:45:56Z Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications Toh, E.-H. Wang, G.H. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.2924413 Journal of Applied Physics 103 10 - JAPIA 2014-06-17T02:45:16Z 2014-06-17T02:45:16Z 2008 Article Toh, E.-H., Wang, G.H., Samudra, G., Yeo, Y.-C. (2008). Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications. Journal of Applied Physics 103 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2924413 00218979 http://scholarbank.nus.edu.sg/handle/10635/55626 000256303800123 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1063/1.2924413
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Toh, E.-H.
Wang, G.H.
Samudra, G.
Yeo, Y.-C.
format Article
author Toh, E.-H.
Wang, G.H.
Samudra, G.
Yeo, Y.-C.
spellingShingle Toh, E.-H.
Wang, G.H.
Samudra, G.
Yeo, Y.-C.
Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications
author_sort Toh, E.-H.
title Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications
title_short Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications
title_full Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications
title_fullStr Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications
title_full_unstemmed Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications
title_sort device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/55626
_version_ 1781412161668513792