Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium source

Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium source

10.1143/JJAP.47.2593

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Bibliographic Details
Main Authors: Toh, E.-H., Wang, G.H., Chan, L., Sylvester, D., Heng, C.-H., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Double-gate
Silicon- germanium
Subthreshold swing
TFET
Tunneling
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55624
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/55624

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