Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium source

Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium source

10.1143/JJAP.47.2593

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Bibliographic Details
Main Authors: Toh, E.-H., Wang, G.H., Chan, L., Sylvester, D., Heng, C.-H., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Double-gate
Silicon- germanium
Subthreshold swing
TFET
Tunneling
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55624
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Institution: National University of Singapore
id sg-nus-scholar.10635-55624
record_format dspace
spelling sg-nus-scholar.10635-556242023-10-25T23:16:26Z Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium source Toh, E.-H. Wang, G.H. Chan, L. Sylvester, D. Heng, C.-H. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Double-gate Silicon- germanium Subthreshold swing TFET Tunneling 10.1143/JJAP.47.2593 Japanese Journal of Applied Physics 47 4 PART 2 2593-2597 JAPND 2014-06-17T02:45:15Z 2014-06-17T02:45:15Z 2008-04-25 Article Toh, E.-H., Wang, G.H., Chan, L., Sylvester, D., Heng, C.-H., Samudra, G.S., Yeo, Y.-C. (2008-04-25). Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium source. Japanese Journal of Applied Physics 47 (4 PART 2) : 2593-2597. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.47.2593 00214922 http://scholarbank.nus.edu.sg/handle/10635/55624 000255449100055 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Double-gate
Silicon- germanium
Subthreshold swing
TFET
Tunneling
spellingShingle Double-gate
Silicon- germanium
Subthreshold swing
TFET
Tunneling
Toh, E.-H.
Wang, G.H.
Chan, L.
Sylvester, D.
Heng, C.-H.
Samudra, G.S.
Yeo, Y.-C.
Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium source
description 10.1143/JJAP.47.2593
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Toh, E.-H.
Wang, G.H.
Chan, L.
Sylvester, D.
Heng, C.-H.
Samudra, G.S.
Yeo, Y.-C.
format Article
author Toh, E.-H.
Wang, G.H.
Chan, L.
Sylvester, D.
Heng, C.-H.
Samudra, G.S.
Yeo, Y.-C.
author_sort Toh, E.-H.
title Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium source
title_short Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium source
title_full Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium source
title_fullStr Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium source
title_full_unstemmed Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium source
title_sort device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium source
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/55624
_version_ 1781412161274249216

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