Tunneling field-effect transistor: Effect of strain and temperature on tunneling current

Tunneling field-effect transistor: Effect of strain and temperature on tunneling current

10.1109/LED.2009.2026296

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Bibliographic Details
Main Authors: Guo, P.-F., Yang, L.-T., Yang, Y., Fan, L., Han, G.-Q., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Double gate
Strain
Temperature
Tunneling
Tunneling field-effect transistor (TFET)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83232
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83232

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