Tunneling field-effect transistor: Capacitance components and modeling

Tunneling field-effect transistor: Capacitance components and modeling

10.1109/LED.2010.2047240

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Bibliographic Details
Main Authors: Yang, Y., Tong, X., Yang, L.-T., Guo, P.-F., Fan, L., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Modeling
parasitic capacitance
tunneling field-effect transistor (TFET)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83231
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83231

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