Tunneling field-effect transistor: Capacitance components and modeling

Tunneling field-effect transistor: Capacitance components and modeling

10.1109/LED.2010.2047240

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Bibliographic Details
Main Authors:	Yang, Y., Tong, X., Yang, L.-T., Guo, P.-F., Fan, L., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Modeling parasitic capacitance tunneling field-effect transistor (TFET)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83231
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Institution:	National University of Singapore

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