A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy

• Main Authors: Courté, Marc, Surya, Sandeep G., Thamankar, Ramesh, Shen, Chao, Rao, V. Ramgopal, Mhailsalkar, Subodh Gautam, Fichou, Denis
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2017
• Subjects: DIPO-Ph4; Field-effect transistors
• Online Access: https://hdl.handle.net/10356/82287; http://hdl.handle.net/10220/43525
• Institution: Nanyang Technological University

The charge transport properties of 2,2′,6,6′-tetraphenyldipyranylidene (DIPO-Ph4), a large planar quinoïd π-conjugated heterocycle, are investigated in field-effect transistor (FET) configuration and by conductive atomic force microscopy (c-AFM). The FET properties show a clear p-type behavior with...