The development of a highly selective KI/I2/H2O/H2SO4 etchant for the selective etching of Al0.3Ga0.7As over GaAs

The development of a highly selective KI/I2/H2O/H2SO4 etchant for the selective etching of Al0.3Ga0.7As over GaAs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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Bibliographic Details
Main Authors: Lau, W.S., Chor, E.F., Kek, S.P., Abdul Aziz, W.H.B., Lim, H.C., Heng, C.H., Zhao, R.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
AlGaAs
GaAs
Heterojunction bipolar transistor (HBT)
I2
Iodide
Iodine
KI
ph
Selective etching
Selectivity
Triiodide
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81248
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/81248

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