The development of a highly selective KI/I2/H2O/H2SO4 etchant for the selective etching of Al0.3Ga0.7As over GaAs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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Bibliographic Details
Main Authors:	Lau, W.S., Chor, E.F., Kek, S.P., Abdul Aziz, W.H.B., Lim, H.C., Heng, C.H., Zhao, R.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Subjects:	AlGaAs GaAs Heterojunction bipolar transistor (HBT) I2 Iodide Iodine KI ph Selective etching Selectivity Triiodide
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81248
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-81248
record_format	dspace
spelling	sg-nus-scholar.10635-812482015-01-07T08:07:18Z The development of a highly selective KI/I2/H2O/H2SO4 etchant for the selective etching of Al0.3Ga0.7As over GaAs Lau, W.S. Chor, E.F. Kek, S.P. Abdul Aziz, W.H.B. Lim, H.C. Heng, C.H. Zhao, R. ELECTRICAL ENGINEERING AlGaAs GaAs Heterojunction bipolar transistor (HBT) I2 Iodide Iodine KI ph Selective etching Selectivity Triiodide Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 36 6 A 3770-3774 JAPND 2014-10-07T03:06:16Z 2014-10-07T03:06:16Z 1997-06 Article Lau, W.S.,Chor, E.F.,Kek, S.P.,Abdul Aziz, W.H.B.,Lim, H.C.,Heng, C.H.,Zhao, R. (1997-06). The development of a highly selective KI/I2/H2O/H2SO4 etchant for the selective etching of Al0.3Ga0.7As over GaAs. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 36 (6 A) : 3770-3774. ScholarBank@NUS Repository. 00214922 http://scholarbank.nus.edu.sg/handle/10635/81248 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
topic	AlGaAs GaAs Heterojunction bipolar transistor (HBT) I2 Iodide Iodine KI ph Selective etching Selectivity Triiodide
spellingShingle	AlGaAs GaAs Heterojunction bipolar transistor (HBT) I2 Iodide Iodine KI ph Selective etching Selectivity Triiodide Lau, W.S. Chor, E.F. Kek, S.P. Abdul Aziz, W.H.B. Lim, H.C. Heng, C.H. Zhao, R. The development of a highly selective KI/I2/H2O/H2SO4 etchant for the selective etching of Al0.3Ga0.7As over GaAs
description	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Lau, W.S. Chor, E.F. Kek, S.P. Abdul Aziz, W.H.B. Lim, H.C. Heng, C.H. Zhao, R.
format	Article
author	Lau, W.S. Chor, E.F. Kek, S.P. Abdul Aziz, W.H.B. Lim, H.C. Heng, C.H. Zhao, R.
author_sort	Lau, W.S.
title	The development of a highly selective KI/I2/H2O/H2SO4 etchant for the selective etching of Al0.3Ga0.7As over GaAs
title_short	The development of a highly selective KI/I2/H2O/H2SO4 etchant for the selective etching of Al0.3Ga0.7As over GaAs
title_full	The development of a highly selective KI/I2/H2O/H2SO4 etchant for the selective etching of Al0.3Ga0.7As over GaAs
title_fullStr	The development of a highly selective KI/I2/H2O/H2SO4 etchant for the selective etching of Al0.3Ga0.7As over GaAs
title_full_unstemmed	The development of a highly selective KI/I2/H2O/H2SO4 etchant for the selective etching of Al0.3Ga0.7As over GaAs
title_sort	development of a highly selective ki/i2/h2o/h2so4 etchant for the selective etching of al0.3ga0.7as over gaas
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/81248
_version_	1681089036810190848

The development of a highly selective KI/I2/H2O/H2SO4 etchant for the selective etching of Al0.3Ga0.7As over GaAs

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