A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy
The charge transport properties of 2,2′,6,6′-tetraphenyldipyranylidene (DIPO-Ph4), a large planar quinoïd π-conjugated heterocycle, are investigated in field-effect transistor (FET) configuration and by conductive atomic force microscopy (c-AFM). The FET properties show a clear p-type behavior with...
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sg-ntu-dr.10356-822872021-01-13T02:24:22Z A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy Courté, Marc Surya, Sandeep G. Thamankar, Ramesh Shen, Chao Rao, V. Ramgopal Mhailsalkar, Subodh Gautam Fichou, Denis School of Materials Science & Engineering School of Physical and Mathematical Sciences Energy Research Institute @ NTU (ERI@N) DIPO-Ph4 Field-effect transistors The charge transport properties of 2,2′,6,6′-tetraphenyldipyranylidene (DIPO-Ph4), a large planar quinoïd π-conjugated heterocycle, are investigated in field-effect transistor (FET) configuration and by conductive atomic force microscopy (c-AFM). The FET properties show a clear p-type behavior with a hole mobility up to 2 × 10−2 cm2 V−1 s−1 and on/off ratio of 104. The transfer characteristics Id/Vg present a clear hysteresis typical of a resistive memory effect. This memory effect is again observed by means of c-AFM in lateral mode using a nearby gold top-contact as the counter-electrode. The c-AFM current response recorded for variable distances d = 0.5–9.0 μm between the AFM tip and the top electrode shows a resistive switching behavior in the low-voltage 0.0–3.0 V region. Repeated “write-read-erase-read” cycles performed at low frequency reveal a non-volatile memory effect in the form of high-resistance and low-resistance states with a stable on/off ratio of 102 during cycling operation. MOE (Min. of Education, S’pore) Published version 2017-08-02T04:52:54Z 2019-12-06T14:52:33Z 2017-08-02T04:52:54Z 2019-12-06T14:52:33Z 2017 Journal Article Courté, M., Surya, S. G., Thamankar, R., Shen, C., Rao, V. R., Mhailsalkar, S. G., et al. (2017). A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy. RSC Advances, 7(6), 3336-3342. https://hdl.handle.net/10356/82287 http://hdl.handle.net/10220/43525 10.1039/C6RA26876E en RSC Advances © 2017 The author(s). This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. 7 p. application/pdf |
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DIPO-Ph4 Field-effect transistors Courté, Marc Surya, Sandeep G. Thamankar, Ramesh Shen, Chao Rao, V. Ramgopal Mhailsalkar, Subodh Gautam Fichou, Denis A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy |
| description |
The charge transport properties of 2,2′,6,6′-tetraphenyldipyranylidene (DIPO-Ph4), a large planar quinoïd π-conjugated heterocycle, are investigated in field-effect transistor (FET) configuration and by conductive atomic force microscopy (c-AFM). The FET properties show a clear p-type behavior with a hole mobility up to 2 × 10−2 cm2 V−1 s−1 and on/off ratio of 104. The transfer characteristics Id/Vg present a clear hysteresis typical of a resistive memory effect. This memory effect is again observed by means of c-AFM in lateral mode using a nearby gold top-contact as the counter-electrode. The c-AFM current response recorded for variable distances d = 0.5–9.0 μm between the AFM tip and the top electrode shows a resistive switching behavior in the low-voltage 0.0–3.0 V region. Repeated “write-read-erase-read” cycles performed at low frequency reveal a non-volatile memory effect in the form of high-resistance and low-resistance states with a stable on/off ratio of 102 during cycling operation. |
| author2 |
School of Materials Science & Engineering |
| author_facet |
School of Materials Science & Engineering Courté, Marc Surya, Sandeep G. Thamankar, Ramesh Shen, Chao Rao, V. Ramgopal Mhailsalkar, Subodh Gautam Fichou, Denis |
| format |
Article |
| author |
Courté, Marc Surya, Sandeep G. Thamankar, Ramesh Shen, Chao Rao, V. Ramgopal Mhailsalkar, Subodh Gautam Fichou, Denis |
| author_sort |
Courté, Marc |
| title |
A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy |
| title_short |
A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy |
| title_full |
A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy |
| title_fullStr |
A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy |
| title_full_unstemmed |
A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy |
| title_sort |
non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy |
| publishDate |
2017 |
| url |
https://hdl.handle.net/10356/82287 http://hdl.handle.net/10220/43525 |
| _version_ |
1690658413824966656 |