The gate leakage current in graphene field-effect transistor

• Main Authors: Mao, L.-F., Li, X.-J., Wang, Z.-O., Wang, J.-Y.
• 其他作者: MATERIALS SCIENCE AND ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: Dielectric films; Graphene electronics; Metal-oxide-semiconductor field-effect transistors (MOSFETs); Tunneling
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/86787
• 機構: National University of Singapore

IEEE Electron Device Letters